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The dielectrostriction effect of thermal SiO2 was experimentally studied in this paper. A beam bending method was used to apply mechanical stresses on the dielectric and the dielectric constant was characterized by the capacitance of a sandwich structure. A model for extracting the dielectrostriction coefficient, M12, was developed and special samples for the measurements were fabricated. According...
Large-scale amorphous SiO2 nanoblades with typical widths of 300-600 nm, thickness of a few tens of nm, and lengths up to 12 ??m have been synthesized on a silicon substrate covered with a 100-nm-thick crystalline SiO2 buffer layer in a controlled aqueous solution. Intense blue luminescence centered at 3.0 and 2.8 eV was observed in the as-synthesized SiO2 nanoblades. The 2.8-eV band can be attributed...
The magneto-transport properties of ferromagnetic based multilayers are dependent on the film thickness, the surface roughness, the nature of the interlayer and pining layer used for exchange biasing. We investigate how the nature of the spacer-layer affects the magnetoresistance and Hall effect properties of the magnetic multilayers. The effective thicknesses of the oxide layers were estimated by...
An innovative fabrication method to produce a nanoporous Si or SiO2 surface by employing anodic aluminum oxidation (AAO) method and reactive ion beam (RIE) etch of MEMS process is presented. To enhance sensitivity and reduce the sensing dimensions of a gas sensor, a nanoporous surface of gas-sensitive material is preferred. This class of sensor devices can be implemented on silicon or silicon-on-insulator...
Oxynitride films have been identified as potential high-k dielectrics in high-k/Si interfaces or as an interlayer film in high-k gate stacks, demonstrating a number of advantages. The processing however, of gate stack materials consisting of nitrogen or hafnium atoms often results in the formation of defects in the dielectric that degrade the performance of the device. In this paper, four different...
In this work, we present a simple fabrication method of ion sensitive field effect transistor (ISFET) using cost effective equipments in a cleanroom laboratory environment. The ISFET has a structure similar to that of a metal oxide semiconductor field effect transistor (MOSFET) except without the metal layer on top of the gate oxide and uses silicon nitride insulating layer as the ion sensing material...
Experimental condition of thin SAB Oxide around 350Aring coupling with 400Aring Contact SiON film has exhibited the worst data retention behavior in One Time Programmable (OTP) & Multiple Time Programmable (MTP) memory device. Another alternative solution has been explored to improve the data retention characteristic by replacing the 400Aring silicon oxynitride (SiON) contact stopper with 300Aring...
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