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In this brief, we report on how controllable process parameters such as metal-gate physical thickness and interfacial-layer-formation method affect the electrical and structural properties of TiN/HfO2/SiO2 gate stacks. We found evidence that Hf is diffusing into chemically formed SiO2 interfacial layers during device processing. The latter is not seen when SiO2 is formed thermally. We show that the...
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