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An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection...
Recently, the SiC chip for power devices had been developed to downsize the cooling system, because the operative temperature of SiC chip can be increase to over 300°C. However it is necessary to realize low temperature mounting and high reliability in high temperature. The author's group has proposed a new method using Ag-Nano material to mount the SiC chip on a Al board. The Ag-Nano can be mounted...
In summary, high-voltage 3300 V, 30 A 4H-SiC DMOSFETs are demonstrated. The device can conduct over 30 A at a power dissipation of 200 W/cm2 in the on-state and block over 3300 V with a VGS of 0 V in the off-state. The devices exhibit normally-off characteristic. More data including dynamic switching performance of the DMOSFETs will be presented at the conference.
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
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