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Inverters for electric vehicle motor drive systems are essential in converting the battery's direct current into alternating current. Si(Silicon) IGBT that is commonly used in inverter modules have large Vce,sat and turn-off time due to p+ drain and tail current. Therefore, inverter modules consist of Si IGBT with relatively low efficiency. If we can use MOSFETs instead of IGBT in inverter modules,...
Silicon carbide (SiC) power semiconductor devices are known to have potential benefits over conventional silicon (Si) devices, particularly in high power applications such as hybrid electric vehicles (HEVs). Recent literature studying the use of SiC JFETs in HEV inverters indicate a substantially increased gas mileage. This paper further investigates this change in inverter efficiency due to the adoption...
High-efficiency electric power conversion is an essential technology for energy saving. The efficiency of power converters/inverters relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This...
As already shown in previous publications (e.g.), Silicon Carbide transistors offer a great potential for reducing system costs of Photovoltaic-inverters by increasing the efficiency and decreasing the size of the heat-sink and the inductive components. The following document shows how the knowledge gained hereby now is implemented in the development of a PV-inverter optimized for the use of Silicon...
Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being...
An inverter phase leg has been developed that can operate in an ambient temperature up to 175 degrees Celsius using commercially-available components to the greatest possible extent. This phase leg includes a discrete gate drive circuit that incorporates both level-shifting and isolated power supply functions. A high-temperature prototype gate drive has been built and tested using small- signal bipolar...
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