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6.5kV Si IGBTs have been used widely in median voltage drives, HVDC, FACTs and traction systems. However, the large switching losses of the Si IGBT limit its switching frequency to only 100Hz to 1kHz. On the other hand, wide bandgap (WBG)power devices such as Silicon Carbide (SiC) MOSFET or JFET have demonstrated their superior advantages over Si IGBT, especially in terms of significantly reduced...
RECENT progress in wide bandgap power (WBG) switches shows great potential. Silicon carbide (SiC) is a promising material for power devices with breakdown voltages of several hundred volts up to 10 kV. SiC Schottky power diodes have achieved widespread commercial acceptance. Recently, much progress has been made on active SiC switches, including JFETs, thyristors, BJTs, IGBTs, and MOSFETs. Many a...
Silicon carbide (SiC) power semiconductor devices are known to have potential benefits over conventional silicon (Si) devices, particularly in high power applications such as hybrid electric vehicles (HEVs). Recent literature studying the use of SiC JFETs in HEV inverters indicate a substantially increased gas mileage. This paper further investigates this change in inverter efficiency due to the adoption...
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper investigates the influence of the gate drive on the switching characteristics of the device and design strategies highlighted.
This paper presents a detailed physical analysis on the junction temperatures, thermal stabilities, and thermal runaway effects of self-heating unipolar SiC power devices. Results reveal that the risk of thermal runaway could limit the usable junction temperature of these SiC devices to substantially lower than 200??C, regardless of the device size and the cooling method used.
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