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In this study, two series of CdTe thin films were prepared by magnetron sputtering and analyzed in-situ using real time spectroscopic ellipsometry (RTSE). One series consists of CdTe thin films deposited at substrate temperatures ranging from 188°C to 304°C at a fixed Ar sputtering pressure of 18 mTorr, and the other consists of films deposited at pressures ranging from 2.5 to 50 mTorr at a fixed...
The Cu2S electrolyte films have been deposited on Pt/TiO2/SiO2/Si(111) and conductive Si(111) substrates by using pulsed laser deposition(PLD) technique with a specially designed temperature program, which matches the dasialift-offpsila technology of semiconductor industry. The structures of the Cu2S films were characterized by using X-ray diffractions, and their surface morphology was studied by...
The precursor Zn3N2 films were deposited on quartz glass substrates by reactive DC magnetron sputtering and oxidized in situ at various temperatures by introducing pure oxygen gas directly into the deposition chamber. X-ray diffraction (XRD), scanning electron microscopy (SEM), UVNIS transmittance, Hall-effect measurements and photoluminescence (PL) were carried out to investigate the structural,...
Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method . In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga metals at a low growth temperature of 550degC .Temperature is the critical experimental parameter for the formation...
Investigations on the piezoresistive effect of poly-silicon nanofibns (PSNFs) have not been presented, since it is considered that their piezoresistive properties can become worse with film thickness decreasing. However, our experimental results indicated that the PSNFs (~100nm in thickness, even thinner) had a high gauge factor (>30) and low temperature coefficients of resistance and gauge factor,...
Vanadium doped ZnO films with the doping concentration of 0.8% were deposited onto glass substrates at different sputtering pressures by direct current (DC) reactive magnetron sputtering using a zinc target doped with vanadium. The effect of the sputtering pressures (5*10-3 - 3*10-2 mbar) on the structural properties of the deposited films have been studied by X-ray diffraction (XRD), scanning electron...
The influence of film structure on temperature characteristics of polysilicon nanofilms (PSNFs) was reported in this paper. Samples were deposited by LPCVD with different film thickness and deposition temperature. The microstructure of films was characterized by SEM, TEM and XRD. By measuring the resistivity and the gauge factor of samples at different temperatures, temperature coefficients of the...
PdO/TiO2 nanocomposites were prepared by ployol method. TEM, XPS and FSEM were used to observe and measure the microstructure and chemical state of the PdO/TiO2 film. In this process, Pd(acac)2 was a Pd precursor, ethylene glycol was a reductant, and nano TiO2 powder (Degussa P25) was a support, in which the nanopaticles of Pd were highly dispersed on the surface of TiO2. The Pd/TiO2 was deposited...
The simultaneous electrodeposition of the Cu-In-Se system was investigated. The study was carried out at pH 1.8 using sodium citrate as complexing agent for the Cu2+ ion. The synthesis of CuInSe2 semiconductor thin film was carried out by electrodeposition on indium-tin oxide (ITO) /soda-lime glass. The simultaneous composition of the Cu, In, and Se was achieved by constant potential electrolysis...
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