The Cu2S electrolyte films have been deposited on Pt/TiO2/SiO2/Si(111) and conductive Si(111) substrates by using pulsed laser deposition(PLD) technique with a specially designed temperature program, which matches the dasialift-offpsila technology of semiconductor industry. The structures of the Cu2S films were characterized by using X-ray diffractions, and their surface morphology was studied by using atom force microscopy(AFM) and scanning electron microscopy(SEM). With the fused ion beam(FIB) technique, the Cu2S circular memory units of 300 nm diameter with sandwich structures CU/Cu2S/Pt and Cu/Cu2S/Si(111) were fabricated, and their electric switching properties were investigated. The resistance ratio between the dasiaOFFpsila state and the dasiaONpsila state reaches 1times107 for the memory unit Cu/Cu2S/Pt, and 3.3times103 for the memory unit Cu/Cu2S/Si(111), which matches the requirements of the non-volatile memory devices of next generation.