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We studied the carrier multiplication efficiency in bulk silicon using optical-pump/THz-probe spectroscopy. By the close analysis of the time resolved data, we observed the enhancement of the quantum efficiency due to carrier multiplication for incident photon energy above 4.1 eV. It agrees well with the results of photo current measurements. We believe that the present results enable us to correlate...
The upcoming 2011 general conference on weights and measures (CGPM) will consider a proposal to re-define the SI unit ampere by assigning a fixed value to the electron charge e, while simultaneously releasing the permeability of free space μ0 to become a measured parameter. This review provides the background to the proposed re-definition and describes research into electron pumps aimed at supporting...
This work aims at the characterization of cadmium-telluride detector bump-bonded on the TimePix readout chip and the evaluation of its potential as a tool to study the double beta decay (ββ) processes (such as β−β− or EC/EC), typically performed in ultra low background conditions. First tests with the CdTe pixelated sensor (256x256 pixel matrix, 55μ, m pitch, 1mm sensor thickness) have been performed...
This paper reviews recent experimental confirmations that the intrinsic radiation robustness of commercial CMOS technologies naturally improves with the down-scaling. When additionally using innovative design techniques, it becomes now possible to assure that performance and radiation-hardness are both met. An illustration is given with an original nano-power and radiation-hardened 8 Mb SRAM designed...
Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
Design and characterization of a new generation of single-photon avalanche diodes (SPAD) array, manufactured by ST-Microelectronics in Catania, Italy, are presented. Device performances, investigated in several experimental conditions and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the breakdown condition in Geiger mode at low voltage...
A theoretical model is proposed in this work for an evaluation of the specific heat and Debye temperature of thin-film semiconductors. In the model, the specific heat contributed by the confined acoustic phonons is calculated first. An effective Debye temperature is then defined by fitting the conventional Debye model to the calculated specific heat. It is found that the so-defined Debye temperatures...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
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