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Modification of Ga depth profiles in Cu(InGa)Se2 films on polyimide substrates has coincided with device efficiencies approaching 19% at temperatures at least 100 °C lower than on glass substrates. In the present study, (AgCu)(InGa)Se2 films with nominal bandgaps Eg ≈ 1.4 eV have been deposited on polyimide substrates using various three-stage deposition processes to modify Ga depth profiles. Devices...
Thin film CdS/CdTe solar cells were fabricated by close space sublimation at the substrate temperature ranging from 300degC plusmn 5degC to 340 plusmn 5degCdegC. The best photovoltaic parameters were achieved at substrate temperature 320degC and source temperature 610degC. The open circuit voltage and current density changes significantly with the substrate temperature and depends on the substrate...
Results on the development of polycrystalline III–V based devices grown by OMVPE on thin metallic foil substrates are presented. It has previously been demonstrated that device quality polycrystalline Ge suitable for OMVPE growth can be produced on metallic foils using a recrystallization process. This work reports on the development of textured metal foil substrates with low misfit grain boundary...
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