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An epitaxial design with a half-lambda optical cavity surrounded by only two oxide-current apertures as small as 2-micrometer in diameter leads to highly confined optical fields and carriers and to a record 29.3-GHz small-signal modulation bandwidth at room temperature for 980-nm vertical-cavity surface-emitting lasers.
The scalability of high-performance computing systems is increasingly dependent on high-bandwidth and power-efficient communication between a growing number of processing cores on- and off-chip. Recent developments in silicon photonics technology can potentially alleviate many of the challenges associated with these stringent interconnection demands. In this letter, we propose the use of an optical...
A Chip-level EAM/MQW-based optical interconnect concept with vertically-coupled efficient CW VCSELs and inter-chip links is analyzed, enabled by a lithographically-defined high-density multi-mode waveguide fabric. Projected energy/bit, bandwidth density, and packaging tolerances enable scaling with foreseeable CMOS technology.
Hybrid integrated chip-scale optical interconnects based on small-footprint coupling to surface-normal MQW devices are advanced. Refinements to the grayscale lithographic fabrication process provide a path to ultra-high-density seamless interfacing between the on- and off-chip domains.
Novel guided-wave optical interconnect fabrics providing minimum footprints for MQW modulators-based systems are introduced, enabling high-density and low-power photonic links, to prevent performance saturation in microprocessors at the chip-level.
In this paper we review our work in the field of III-V/SOI photonic integrated components for intra-chip optical interconnect applications. III-V/SOI microdisk light sources, modulators and switches, together with resonant III-V/SOI photodetectors will be discussed.
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