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We propose a novel short and deep drain (SDD) MOSFET structure and SDD based circuits that are suitable for space applications. The 3-D TCAD simulations for heavy ion radiation with LET of 10 MeV-cm2/mg have been carried out on both SDD MOSFET and SDD inverter. From TCAD simulations, we observe that SET magnitude in SDD inverter is reduced by 43% by using shorter drain and by 17% by using deeper drain...
Detailed, physics-based three-dimensional (3D) technology computer-aided-design (TCAD) device model, coupled in mixed-mode with external load circuit and parasitics, enabled accurate simulation of single-event effects (SEEs) in nonplanar silicon-on-insulator (SOI) Multi-Gate Field Effect Transistors (MuGFETs) or FinFETs. We show the importance of correct device physics models, including mobility in...
To design wide-temperature radiation-tolerant electronic systems for space missions and predict their characteristics and reliability in space, advanced models and simulation tools are required at multiple levels. Detailed, physics-based three-dimensional (3D) technology computer-aided-design (TCAD) device models, coupled in mixed-mode with external circuit models, enable accurate simulation and prediction...
The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in nonplanar nano-scale devices, such as MultiGate Field Effect Transistors (MuGFETs) or FinFETs. We show the importance of correct device physics models, including mobility in different...
The paper presents details of our physics-based three-dimensional (3D) device modeling coupled in mixed-mode with external load circuit and parasitics, which enabled accurate simulation of single-event effects (SEEs) in III-V compound high electron mobility transistors (HEMTs). We show the importance of correct device physics models, such as Schottky barriers and tunneling, as well as effects of parasitics...
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