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We demonstrate InP-based high power modified uni-traveling carrier photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. These photodiodes reach 20 nA dark current at −5 V bias voltage. A 50 μm long device exhibits an internal responsivity of 1.07 A/W. The bandwidths of the devices with 14×25 μm2, 14×50 μm2, 14×100 μm2 and 14×150 μm2 area are 22 GHz, 16 GHz, 10 GHz and 7 GHz,...
Nanoscale electronic devices will require the placement of dopants in a predetermined location, namely, a single atom control to explore novel functions for future nanoelectronics. Deterministic doping method, i.e. single-ion implantation, realizes ordered arrays of single-atoms in silicon, diamond and other materials, which might provide opportunities to single-dopant transport or single-photon source...
High purity diamonds obtained from carbon vapor deposition (CVD) on silicon backing show a lot of reticular defects which produce low energy resolution and low electric signals under bombardment with nuclear particles. The problem can be overcome allowing CVD diamonds to grow on suitable low cost diamond backings: e.g. HPHT diamond pieces. Diamond crystal 100 microns thick, grown with this new technique...
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