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This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 µm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance...
In this paper the evolution of complementary printed antenna for wideband has been proposed. The proposed antennas are designed to operate from 3.3GHz until 14GHz. The antenna consists of slotting and radiating element in both sides act as complementary of each other. The slotting purposed for enhanced the bandwidth. CST Microwave studio has been used to bear out the simulation results. The antennas...
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