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Broad photoluminescence (PL) band at 2.97eV excited in the band near 6.0eV in amorphous chemical vapor deposition films is related to the neutral oxygen vacancy by analogy with crystalline Al 2 O 3 . The identification of this PL band was supported by the results of first-principle quantum chemical simulation, which showed 6.3 and 6.4eV bands in the extinction spectra for α- and γ-Al...
A probabilistic method is presented for computing the average thickness of a thin, growing solid film undergoing a phase change in which the phases grow at different rates. This approach can describe a variety of growth behaviors including chemical vapor deposition and growth by oxidation. This method is shown to agree with a simulation of deposition. It is then used to model literature data on the...
Thin films of (HfO2)x(Al2O3)1-x alloys were prepared by chemical vapor deposition using the volatile coordination compounds. Amorphous structure of the films has been revealed by X-ray analysis when the Al content is of >30%. It was shown by EDS and XPS that Al concentration increases with rising the substrate temperature and content of the Al(acac)3 in mixture of the precursors. Formation of (HfO...
Silicon nanorods have been grown by chemical vapor deposition of silane, using both gold and indium as catalysts for the vapor liquid solid (VLS) process. Conditions for optimal rod morphology for each catalyst were identified by varying silane partial pressure and temperature in the range P=0.05-1 Torr and T=300-600 degC, respectively. In most cases, catalyst particles were formed by partial de-wetting...
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