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Without employing gate dielectrics, AlGaN/GaN high-electron mobility transistors (HEMTs) on Si with non-alloyed regrown ohmic contacts exhibit record-low leakage currents $\sim 10^{-12}$ A/mm, high ON/OFF current ratios $> 10^{11}$ . Compared with HEMTs with conventional alloyed ohmic contacts, HEMTs with non-alloyed contacts show a reduction of $10^{6}$ in leakage current, a steeper subthreshold...
We report on fabrication of enhancement-mode True-MOS high electron mobility transistor (HEMT) with ZrO2 gate dielectric. The GaN cap and AlGaN layers in the gate area are completely recessed by dry etching up to the GaN channel layer. The increase in channel resistance subsequent to the recess is compensated by adopting sub-micrometer gates and the negative Vth shift is mitigated by using a high-k...
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