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SiNx-doped Sb2Te3 films for nonvolatile memories were prepared by co-sputtering with Si3N4 and Sb2Te3 alloy targets. Electrical and structural properties were investigated and compared to those of conventional GST and pure Sb2Te3 film by annealing temperature-dependent resistivity measurement, x-ray diffraction (XRD). The resistivity ratio is larger than 105 during the phase transition, accompanied...
Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%) / X2O3(2%) ceramic target, X ∈{Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence...
Using the magnetron sputtering technology, high quality Al2O3-based textured ZnO thin films (Al2O3/ZnO) which can be applied to solar cells' light trapping effect were fabricated by controlling the preparation parameters properly. X-ray diffraction (XRD) and Scanning electron microscopy (SEM) results show that O2 /(Ar+O2) flow ratio has great influence on Al2O3/ZnO films surface morphology during...
AuAl alloys prepared by thermal diffusion on p-type silicon (100) substrates were studied. Au/Al bilayers were prepared with 50%:50% as atomic concentration and 100 nm as total thickness. The formed Au/Al/Si systems were annealed from room temperature (RT) to 400??C in a vacuum oven with Argon atmosphere to form the AuAl alloys by thermal diffusion at different times (1, 2, 4 and 6 h). Prepared alloys...
In-N co-doped P-type ZnO films were prepared on SiO2 and glass substrates by IBED method. The structural, optical and electrical properties were characterized by XRD, XPS, AFM and Hall test. The tests results show that the film was polycrystalline with a preferred (002) orientation. The resistivity, mobility and carrier concentration was 1.6times10-3 Omegamiddotcm, 35.9 cm2/VmiddotS and 1.66times10...
In this paper the response of printed thick-film of WO3 doped by Y2O3 to organic solvent was studied. Different ratio of doping was prepared and changes of film resistance at different temperature in present of vaporized types of alcohol were observed. The results showed a high sensitivity of the film of 80.1%WO3-18.8%Y2O3 to Toluene, Xylene, Methanol, and 2-Propanone (Acetone) at 250, 450, and 550degC,...
The thermal evaporation deposition technique was used to produce zinc oxide thin film onto p-type silicon substrate at room temperature. The prepared film was post annealed at different temperature from 400 to 800degC in O2 ambient atmosphere for 20 minutes. The effect of post annealing temperature on the structural properties and surface morphological of ZnO thin films have been studied by XRD and...
As the size of metal oxide semiconductor devices continues to be scaled down to sub-90 nm, novel materials must be integrated successfully in order to meet the technical demands. Nickel silicide (NiSi) is being considered as an alternative material to cobalt silicide (CoSi2) for the self-aligned silicide process, because it forms at lower temperatures with less silicon consumption and is compatible...
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