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Aluminum has been widely used in integrated circuit (IC) chip interconnect As the IC feature sizes continue to shrink, the RC delay of the interconnect wire has become the main delay of the system, instead of the intrinsic gate delay. For the higher speed responsibility, the resistance of the interconnects should be reduced. Copper interconnect has become the only one option for the semiconductor...
In this work are discussed the technology for preparing and characterisation of indium-tin oxide (ITO) and ITO with titanium oxide underlayer thin films with properties appropriate for usage at elevated temperatures as heat reflective coatings and gas sensors. For preparing the samples the methods of radio frequency (RF) and DC-magnetron reactive sputtering were used. Sputtering of indium-tin and...
We report the deposition and characterization of thin ZnO films on 〈100〉 silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics, metals, nucleation layers and barrier materials,...
TiO2 films were deposited on different substrates such as SiNx/Si, SiOx/Si, Si and Ge by a sol-gel method. The structural properties of the films were investigated by XRD, SEM and XPS. The results showed that the substrates played a crucial role in the crystalline quality and materials stoichiometry of sol-gel derived TiO2 films. Especially, the film deposited on SiNx/Si substrate had a better crystalline...
Ultra-thin yttrium oxide (Y2O3) films (physical thickness of 7 nm) were deposited on p-Si substrates by RF sputtering for MOS applications. The structural properties of the Y2O3 gate dielectrics were studied after RTA from 650 to 850??C. The crystalline phase and chemical bonding state of the films were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively...
In this paper nanocrystalline thin films of TiO2 doped with Tb have been investigated. Thin films were deposited on different (silicon and glass) substrates using modified magnetron sputtering method named High Energy. Structural properties were examined by X-Ray Diffraction (XRD) method. The results have shown, that phase and average crystallites size of prepared thin films were determined by the...
In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS...
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