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A study of the effect of substrate temperature on oblique-angle sputtered galium-doped zinc oxide (GZO) thin films was carried out. Both the oblique-angle sputtering and the substrate temperature lowered the resistivity of GZO thin films down to 4 × 10-3 Ωcm together with an increase of their optical transmittance over 90%.
Zinc oxide (ZnO) thin films were deposited on glass substrates at room temperature using direct current (DC) magnetron sputtering technique. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influence of the deposition pressure on structural properties of the ZnO films was investigated using atomic force microscopy (AFM). The optical properties of the ZnO films were measured using...
Transparent conducting oxides (TCOs) based on gallium-doped ZnO (GZO) are deposited using a radio-frequency (RF) superimposed direct current (DC) magnetron system. The electrical, optical, and structural properties of GZO films deposited by varying the RF/DC power ratio are presented. Our results indicate an increase in conductivity of GZO films up to 3800 S/cm when grown in a pure argon atmosphere...
Al-doped ZnO thin films as a front electrode of silicon pin solar cells were prepared on the glass substrates by rf magnetron sputtering in which working pressure and substrate temperature were controlled precisely. After film deposition, the films were etched by dilute acid solution to obtain the textured surfaces. Material properties of the deposited films were investigated by various analytical...
Tantalum-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300degC. The influence of O2/Ar ratio on the structural, electrical, and optical properties of the as-deposited films is investigated. The lowest resistivity of 4.1times10-4 Omegacm is obtained from the film prepared at the O2/Ar ratio of 1/12. The average optical transmittance of the...
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