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The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
The failure mechanisms for NLDMOS transistors subjected to rectangular power pulses are investigated. The study confirms by measurement and simulation that the transistors survive single power pulses up to an energy that causes snapback at a critical temperature. However, devices can fail due to large thermal-mechanical stress and metal migration when subjected to repetitive power pulses of significantly...
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