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CNT-based complementary logic using low-temperature processed end-boned metal contacts are demonstrated. This new form of end-bonded contact is made by carbon dissolution into metal contacts with high carbon solubility (e.g., Ni and Co), which requires only low annealing temperature (400−600 °C). As-fabricated end-bonded Ni contacts serve as robust p-type contacts to CNTs and perform better than standard...
Based on large-scale ab-initio calculations contact properties of carbon nanotubes field effect transistors with 9-nm channel were analyzed. We have found that the internal part of the nanotube is metalized, while the uncovered CNT portion is p-doped due to the influence of the metal. Our findings can explain unique scaling of the CNT-FETs based on first-principles.
Pure carbon nanotubes have been known to exhibit ambipolarity. This is very different from the conventional semiconductors that are controlled by an intentional doping with extrinsic materials. The ambipolarity has been a serious drawback in adopting carbon nanotubes for CMOS technology. Carbon nanotubes show p-type behavior in ambient conditions. The difficulty arises from the absence of stable n-type...
We have shown that it may be possible to use a CNT-GNR heterostructure to obtain a novel transistor action such that (i) at low voltage the device acts like a tunneling transistor, reducing the voltage requirement below the classical limit and (ii) at high voltages the tunnel barrier is effectively diminished, thus allowing a large drive current. Therefore, such a heterostructure may combine the best...
Carbon nanotubes (CNTs) are novel quasi-one-dimensional materials with excellent electrical properties in addition to their remarkable mechanical strength, thermal conductivity and chemical inertness. Moreover, semiconducting CNTs are direct-gap semi-conductors that directly absorb and emit light. This offers the possibility of developing a CNT-based electric and optoelectronic technology.
Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation...
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