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Scaling issues in thermal behavior of silicon MOSFETs have been discussed for devices with typically larger than 100 nm. Cutting edge technologies of silicon devices are exploring the issues in deep nanometer length scales, where it is claimed that the conventional Fourier-based thermal model does not apply. It is also claimed that the BTE-based transport model is the theoretical tool to discuss the...
In this contribution we report on electro-thermal modeling and simulation strategy of large area multicellular Trench-IGBT (TIGBT). The proposed solution is based on two coupled systems: a 3D thermal simulator and a 1D electrical (with temperature dependent parameters) physical model of single TIGBT cell. The single cell electrical model has been calibrated to fit the experimental characteristics...
Summarizing the results collected on several technologies, we have studied the impact of temperature on MOSFET mismatch, highlighting the improvement of current gain matching properties with temperature, suggesting a possible physical explanation to this phenomenon and proposing a BSIM3 model implementation for Monte Carlo mismatch simulations.
This paper explores a coupled electro-thermal modeling approach based on the integration of analytical compact models of semiconductor physics with a distributed three-dimensional description of thermal phenomena. The main motivation for the development of novel approaches resides in the increasing integration level of power components and equipment, which is pushing the validity of essentially-1D...
A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference...
Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of self- consistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely...
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