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This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with...
We have developed a versatile methodology to systematically investigate the RF reliability of GaN High-Electron Mobility Transistors. Our technique utilizes RF and DC figures of merit to diagnose the degradation of RF stressed devices in real time. We have found that there is good correlation between selected RF and DC figures of merit. However, compared with DC stress, RF stress at the same bias...
This study reports on a reliability investigation of AlGaN/GaN HEMTs submitted to life tests in High Temperature Operating (HTO) conditions at 150°C, 175°C, 275°C and 320°C. These life tests showed two different degradation steps of the drain current. One is occurring in the first tens of hour of the life test and characterized by a decrease of the drain current. The evolution of the electrical characteristics...
In this work the stability of Gallium Nitride based high electron mobility transistors grown on 4-in Si substrate (GaN-on-Si HEMTs) were tested both in off-state at high drain voltage (200 V) and in on-state at large gate voltage (+2 V) with low drain bias (5 V). In each stress experiment the ambient temperature was fixed at 200°C. Remarkably, despite the considerably large drain voltage used in the...
This work is a study of the degradation of AlGaN/GaN HEMTs generated by different ageing tests. The methodology is based on cross-characterisation analyses. The life tests (HTO 175°C, HTO 250°C, HTO 275°C and HTO 320°C) have mainly caused a strong decrease of the drain current at the very beginning of the test, then its partial recovery and finally its collapse. No evident degradation of the Schottky...
We succeeded to develop the SiC-PiN diodes with the breakdown voltage VBR of > 6 kV and active area of 16 mm2. On-voltages at 25°C were 3.38 V at forward current density JF of 100 A/cm2 and 3.68 V at JF of 200 A/cm2. A negative shift of on-voltage was observed at the elevated temperatures. On-voltages at 125°C are 3.19 V at JF of 100 A/cm2 and 3.48 V at JF of 200 A/cm2. The avalanche breakdown...
CdS/CdTe cells deposited on cadmium and zinc stannate (CTO/ZTO) transparent conducting oxide (TCO) substrates show greater degradation than similar devices fabricated on SnO2-based substrates. This has been confirmed in two separate studies in which J-V changes during stress suggest different degradation mechanisms believed to be due to differences in processing. In addition, cells made using the...
In this study, we have investigated the high-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs. For this purpose, we fabricated large size blue InGaN/GaN LED chips (1mm??1mm) by using standard LED fabrication processes, where the ITO and Cr/Au served as p-type ohmic contact and n-ohmic contact layer, respectively.
Lifetime measurements on single, packaged UV LEDs were performed under constant current injection at 20 and 75 mA (60 and 226 A/cm2). The junction temperature at operation was found by micro-Raman spectroscopy to be 57 and 184degC, respectively. Unbiased LEDs of similar characteristics placed in an oven baked at the equivalent operating junction temperatures showed a degradation in output power similar...
This paper describes an analysis of the reliability of GaN-based laser diodes, submitted to constant current, constant optical power and high temperature stress. We demonstrate that constant current and constant optical power stress induce the increase of the threshold current of the devices, that varies according to the square-root of time. The threshold current increase is found to be strongly correlated...
This paper describes an analysis of the reliability of AlGaN-based deep-UV Light-Emitting Diodes (LEDs) emitting in the range 280-340 nm. LEDs have been aged at their nominal operating current, and during treatment their electrical and optical characteristics have been continuously monitored. Measurement results show that (i) constant current stress can induce degradation of the optical power emitted...
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