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Silicon carbide (SiC) power semiconductor devices are known to have potential benefits over conventional silicon (Si) devices, particularly in high power applications such as hybrid electric vehicles (HEVs). Recent literature studying the use of SiC JFETs in HEV inverters indicate a substantially increased gas mileage. This paper further investigates this change in inverter efficiency due to the adoption...
Silicon carbide (SiC) MOSFET power devices are expected to replace silicon IGBTs in power electronics applications requiring higher efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the development of high efficiency SiC power MOSFETs, power modules and switching converters at GE. The prototype 30A, 1200V discrete devices have on-resistance...
Emerging silicon carbide (SiC) MOSFET power devices promise to displace silicon IGBTs from the majority of challenging power electronics applications by enabling superior efficiency and power density, as well as capability to operate at higher temperatures. This paper reports on the recent progress in development of 1200V SiC power MOSFETs. Two different chip sizes were fabricated and tested: 15A...
In this paper, experimental SiC MOSFET devices have demonstrated high-temperature static operation with low on-state conduction loss and off-state drain leakage current. Double-pulse clamped inductive load tests are used to characterize the switching performance of SiC MOSFET devices.
It is important to understand the properties of SiC MOSFETs that should be optimized to enhance the performance of advanced power. In this paper, the authors quantify the impact of the specific on-resistance and switching loss on determining the device current rating of SiC MOSFETs. This analysis is based on DC and transient characterization of GE 1200 V SiC MOSFETs with specific on-resistance of...
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