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The lattice misfit at the island-cap interface in two In0.15Ga0.85As p-i-n devices, with 5 layers of InAs quantum dots (QDs), was modified by depositing 2.1 and 3.2 ML of InAs while maintaining near identical capping layers. The device with 35 ± 3 nm island size distribution exhibited photoluminescence activity in the near infra-red range from 975 to 1150 nm while the device with 42 ± 12 nm size islands...
Laterally coupled semiconductor quantum dot (QD) arrays emerged recently as promising structures for the next generation of high efficiency intermediate band solar cell (IBSC), due to their ability to facilitate the formation of in-plane minibands with large vertical inter-layer distance to prevent the strain field from influencing its neighboring QD array layers. The lateral quantum coupling effect,...
Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K...
Quantum dot (QD) solar cells have been proposed as a means to exceed the Shockley and Queisser efficiency limit of 31%, via the absorption of sub-band-gap photons, conventionally lost in a single junction solar cell (SC). Previous reports on fabricated InAs/GaAs QDSCs showed a slight increase in photoresponse, due to below-band gap absorption. However, they all showed a severe degradation of open...
A suite of characterization techniques including electron beam induced current and cross-sectional transmission electron microscopy in cooperation with current voltage and external quantum efficiency solar measurements are used to analyze the effects of incorporating strain-compensating layers in GaAs-based InAs quantum dot solar cells. The data indicate that strain compensation layers can reduce...
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