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The lattice misfit at the island-cap interface in two In0.15Ga0.85As p-i-n devices, with 5 layers of InAs quantum dots (QDs), was modified by depositing 2.1 and 3.2 ML of InAs while maintaining near identical capping layers. The device with 35 ± 3 nm island size distribution exhibited photoluminescence activity in the near infra-red range from 975 to 1150 nm while the device with 42 ± 12 nm size islands...
Laterally coupled semiconductor quantum dot (QD) arrays emerged recently as promising structures for the next generation of high efficiency intermediate band solar cell (IBSC), due to their ability to facilitate the formation of in-plane minibands with large vertical inter-layer distance to prevent the strain field from influencing its neighboring QD array layers. The lateral quantum coupling effect,...
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