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Compound-semiconductor-based lasers grown directly on silicon substrates would constitute an important technology for the realization of on-chip optical interconnects. The characteristics of GaAs-or InP-based devices on silicon can be degraded by the large density of propagating dislocations resulting from the large lattice mismatch (> 4%). The use of multiple layers of self-organized In(Ga, Al)As/GaAs...
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