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As the miniaturization of electronic products leads the trend, the dimensions of the solder joints devote to scaling down. With decreasing the size of the solder bump, the current density gets higher. EM becomes a serious reliability issue. The general bump pitch of the solder bump is reduced from 270 μm to below 150 μm due to the demand of miniaturization. In this work, the influence of two Ag-contents...
A demand for small form factor in IC packaging has lead to a reduced bump size and an increased current density. The high current density accompanying with Joule heat induces an electromigration failure. In this study, we investigated the effects of under bump metallization (UBM) on the electromigration failure. Three types of UBM such as Cu 5 μm, Cu 10 μm and Cu 5 μm/Ni 2μm were compared with 60...
The relationship between electromigration behavior and the crystallographic orientation of Sn grains was investigated. The test vehicle was the Cu/Sn-3.0wt%Ag-0.5wt%Cu/Cu dummy flip-chip model, and the applied current density was 15 kA/cm2 at 160°C. The depletion of Cu atoms at the cathode side is a major cause of the early circuit failure. Electromigration behavior and the growth of intermetallic...
Electromigration (EM) of micro bumps of 50 mum pitch was studied using four-point Kelvin structure. Two kinds of bumps, i. e., SnAg solder bump and Cu post with SnAg solder were tested. These bumps with thick Cu under bump metallization (UBM) were bonded with electroless Ni/Au (ENIG) pads. The results showed different EM features comparing with larger flip chip joints. Under various test temperatures...
Two commonly used Pb-free solders, SnAg and SnCu, are studied for electromigration (EM) reliability. Two major EM failure mechanisms are identified in Sn-based Pb-free solders, which is mainly due to the differences in microstructures and Sn-grain orientation. In general, the EM damage in SnCu solder is driven by the fast interstitial diffusion of Ni and Cu away from solder/UBM interface and leads...
Pulsed electromigration (EM) was performed for flip-chip solder bump. Pulsed EM was conducted with current density of 5.2 ~ 7.1 times 104 A/cm2 at 160degC. DC EM was also performed at 3.6 ~ 4.7 times 104 A/cm2 for comparison. Reduction of Joule heating was monitored when pulse current is applied. The life times of pulsed EM samples are larger than those of DC EM samples. The current density exponent...
Chip to substrate interconnect density is continuously being scaled down to support the rapidly decreasing minimum feature size of IC components. At very fine interconnect pitches not many chip to substrate interconnects can meet the requirements of reliability and performance. One potential solution to improve the interconnect reliability is the use of compliant structures as interconnects. In this...
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