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Two topics are introduced from our studies on the formation mechanisms of nanochannels: thermal silicon oxidation to form silicon wire channels, and silicon-carbide thermal decomposition to form atomically thin graphene channels. Silicon emission and oxide viscous flow processes are necessary to explain thermal oxidation to form silicon nanochannels. Interfacial growth should be considered for the...
The band structure of GNM is studied using TB method. It is found that some surface states appear in the vicinity of the Fermi levels. The electron might be trapped on these surface states due to very large effective mass. The increase of the effective bandgap of GNM as the increase of the radius of the nanohole, may be responsible for the increase of current on/off ratio for GNM devices observed...
We discuss atomistic approaches to quantum transport within the semi-empirical tight-binding framework. We show that the latter is well suited to the study of present nanostructures such as carbon nanotubes, semiconductor nanowires and graphene. It indeed provides a very good balance between accuracy and efficiency, and can be coupled with ab initio methods to upscale the calculations to the mesoscopic...
Contacting carbon nanotubes (CNTs) and graphene with nanometer-scale metals is of great interest for both fundamental studies and technical applications. In this work, we describe the fabrication and characterization of sub-5 nm linewidth metallic hafnium diboride (HfB2) nanostructures on silicon surfaces as well as on CNTs and graphene using scanning tunneling microscopy (STM) and spectroscopy (STS).
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
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