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Finishing technologies of machining such as grinding or wire electrical discharge machining (WEDM) represent the most frequently used applications when mechanical engineering components that are subject to high requirements for the accuracy of shapes and dimensions as well as quality of machined areas. The study was focused on the evaluation of the machined surface contamination due to grinding and...
In order to solve the transmission system problems of Flashover, Ni2+ doped TiO2 thin film and pure TiO2 thin film were prepared by sol-gel method. The crystalline phase and morphology were characterized by XRD and AFM, and static contact angle measurement was employed to estimate the wettability of prepared films. The results indicate that a small amount of Ni2+ doped TiO2 thin film makes hydrophilicity...
Plasma enhanced chemical vapor deposition was used to deposit hydrogenated silicon nitride (SiNx:H) thin films using two gas mixtures: SiH4/NH3 AND SiH4/N2. NH3 and N2 gas flowrates were the only deposition parameters varied. Surface morphology of all the samples was observed with the help of atomic force microscopy (AFM). Fourier transform infrared spectroscopy (FTIR) was utilized to examine the...
In this study, bottom contact OFETs with various surface treatments based on 1, 4, 5, 8-naphthalene-teracarboxylic di-imide (NTCDI) derivatives with three different fluorinated N-substituents, systematically investigated with a particular emphasis on the interplay between the morphology of the organic semiconductor films and the electrical device properties. The topography of the NTCDI bottom contact...
Indium–tin–oxide (ITO) surfaces were electrochemically treated with voltages from 0 to +2.8 V in 0.1 M K 4 P 2 O 7 electrolyte. The initial growth mode of hole transport layer (HTL) was investigated by atomic force microscope (AFM) observation of thermally deposited 2 nm N,N-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) on the electrochemically treated ITO...
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