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This paper presents a 29-to-57GHz (65% BW) AM-PM compensated class-AB power amplifier tailored for 5G phased arrays. Designed in 0.9V 28nm CMOS without RF thick top metal, the PA achieves a Psat=15.1dBm±1.6dB and |AM-PM|<1° from 29-to-57GHz, with a peak PAE of 24.2%. Techniques are studied to realize the required load impedance and distortion cancellation over the wide band of operation, while...
This paper presents a fully integrated multiband high gain CMOS tunable power amplifier (PA) for 760–960 MHz, 1.3–1.6 GHz, 1.7–2.34 GHz, 2.35–2.81 GHz, thus, covering 33 Long Term Evolution-advanced (LTE-a) bands for cellular applications. The 3 mm × 1.5 mm PA chip fabricated using 0.13 um CMOS process exhibits peak output power of 21 dBm / 23.2 dBm / 21 dBm / 23 dBm with maximum gain of 34 dB / 42...
Concurrent dual-band switch-mode power amplifiers require high common-mode impedance at their intermodulation frequencies. Baluns utilizing quarter-wave effects only have perfect open common-mode impedance at their design frequency. Attempting to use a balun without taking the new dual-band requirements for common-mode impedance into account will result in efficiency loss. However, the addition of...
Two differential radio frequency (RF) power amplifier (PA) architectures are presented in this paper both of which can be used to implement a wideband Doherty PA. Classic PA architecture is compared to a SB (SB) PA in order to determine an architecture that offers the widest input impedance match without external component tuning. Both amplifiers presented in this paper have been designed to output...
This manuscript presents a simulation based design methodology of an 80-meter Doherty power amplifier with a maximum output power of 40 dBm. The amplifier is designed using a widely available IRF510 enhancement mode MOSFET and lumped elements. The classical Doherty architecture utilizes a Class-AB carrier amplifier and Class-C peaking amplifier. LTSpiceIV is used throughout the design process to validate...
A co-design of an antenna-Power Amplifier (PA) block in RF front-end module is presented. This technique enables the direct integration of PA and antenna without any matching circuits and helps to reduce the loss, power consumption and overall size of the RF front-end modules without affecting the efficiency of the PA. For first two harmonics the impedance matching between the PA and antenna is achieved...
The emerging demand for high-capacity wireless mobile communication and the advent of the Internet of Things and fifthgeneration communication standards have motivated the development of high-performance transceivers. The power amplifier (PA) is the most critical part in the transmit path and dominates the transceiver's performance, including coverage range, data rate, spectrum compliance, and dc...
This work discusses on the design of broadband LDMOS cascaded RF power amplifier (PA) for mobile two-way radio applications. The main focus of this research is centered towards developing the matching network for the PA line up. A design technique of broadband LDMOS cascaded RF power amplifier is introduced here. Impedance transformation by parallel matching network is the core value of this work...
A 1 kilowatt pulsed RF amplifier operating at 150 V for radar applications in the UHF frequency band from 420 MHz to 450 MHz is presented. GaN HEMT devices with 600 V breakdown voltage are becoming ubiquitous in power conversion applications operating from kHz to a few MHz, but they have never been considered for RF applications in power amplifiers. This paper explores the advantages in high power...
In this article, simulation and implementation of a 30 watt high efficient class-AB RF pulse power amplifier using GaN transistor in 1.2–1.4 GHz is presented. Class-AB RF amplifier is widely used in wireless communication industry due to acceptable compromise between linearity and efficiency. Load pull utility provided in Agilent Design System software is employed to obtain the optimum load impedance...
This paper presents a low current, 100 MHz bandwidth envelope detector (ED). The targeted functions relate to the need for many on-chip envelope dependent control schemes for improvement of linearity, efficiency, protection circuits, etc. in CMOS-based transceiver and RFIC power amplifiers (PAs). Measurements from an integrated circuit including an envelope detector and an RF amplifier fabricated...
The design of a 10 W symmetrical Doherty power amplifier in the 900 MHz band is being presented. A short analysis of the Doherty's technique is discussed and the design procedure is described. In order to achieve proper load modulation for maximum efficiency during the 6-dB back-off region an uneven Wilkinson power divider was implemented. The designed Doherty power amplifier was then simulated and...
SUNRAY-1D and 2.5D codes are developed for accurate and fast multi-frequency large-signal analysis of a helix TWT with cylindrical beam. Different structured TWTs, like multi beam TWT, folded-waveguide TWTs, planar helix TWTs, vane-loaded TWTs with sheet beam, and coupled-cavity TWTs, are analyzed using SUNRAY codes. Sheet beam is defined by an equivalent cylindrical beam of effective beam radius...
A new class of S/C Band Miniature Traveling Wave Tubes (TWTs) is being developed for a microwave power module and aero plane that can be used for radar applications. The maximum dimensions of the S/C miniature TWTs, which saturated output is greater than 200 W (53 dBm), and efficiency greater than 30% and harmonic-ratio less than −3dBc, were just 300mm×80mm×40mm.
Signal linearity is becoming an increasingly important requirement for the high power amplifiers used in current wireless communications systems. In this paper we demonstrate an input matching topology to improve the overall linearity performance of the base-station power amplifier. We then show simulation and measurement results using high-power laterally diffused metal oxide semiconductor (LDMOS)...
Envelope tracking (ET) can increase RF Power Amplifier (PA) efficiency by manipulating its supply voltage in harmony with the transmitted signal. The lead-lag modulator described here uses a switched mode power supply (SMPS) for the low frequency envelope content and a linear amplifier (LA) with a synthetic output impedance for the high. When tested with an 8 dB peak-to-average power ratio (PAPR)...
The RF power amplifier (PA) is typically the most power hungry and area consuming block in a wireless transceiver system. A viable RF PA solution should offer competitive power and area efficiency while maintaining high-performance large-signal RF operations. Fully integrated RF PA in CMOS has been an area of active research and development over the past years. Recently, there has been a surge of...
This paper proposes multi-mode transferred power amplifier design. Several discrete frequency points, along with their second and third harmonics are controlled simultaneously by a special output matching network in PA. It allows the PA to transfer its mode to different typical high efficiency classes in these deliberately selected frequencies, which are referred to LTE and 3G systems. The measurement...
Radio frequency power amplifiers (RF PA) are widely used for several applications e.g. wireless communication, wireless power transmission (WPT) and radio frequency heating. In general, the choice of power amplifier's operating class is based on requirements regarding linearity and power efficiency. For applications in which linearity is not a critical issue whereas high efficiency is desired, switched-mode...
In this paper, we perform a simultaneous low- and high-frequency characterization of a microwave power amplifier (PA) circuit under dynamic biasing conditions. Particular attention is paid to the drain bias port characterization and the effects of the dynamic biasing on the radio-frequency (RF) behavior of the PA under test. Experimental results are obtained in order to evaluate the long-term memory...
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