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Speed and power performances of Si-based stacked-nanowire gate-all-around (GAA) FETs and pragmatic ultra-thin-fin FETs at the 5nm CMOS technology node are projected, compared, and physically explained based on 3-D numerical simulations. The respective device domains are also used to compare integration densities based on 6T-SRAM layouts. Predicted comparable performances and densities, with considerations...
FinFETs and Ultrathin Body FETs are promising candidates to enhance scaling trends of CMOS technology. Wavy FinFET is a hybrid device that combines these competing tech-nologies on SOI platform to provide high density and drivability without causing area penalty. The problem associated with this device is higher leakage and lower threshold voltage. Device engineering is the only solution for this...
This paper investigates the high-k spacer Junctionless Accumulation Mode (JLAM) Cylindrical Gate All Around (CGAA) MOSFET for improved electrical behavior and Analog/(RF) performance at 20 nm gate length. In the proposed device, the drive current (ION) enhances due to Source/Channel barrier reduction and leakage current (IOFF) is reduced because of an effective increase in the physical channel length,...
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