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High selective wet etching of GaAs on Al0.3Ga0.7As can be realized using citric buffer (citric acid/H2O2/H2O) solution. The selectivity of GaAs to Al0.3Ga0.7As was as high as 264 at 23 °C by optimizing the pH and citric acid/hydrogen peroxide ratio having the etch rate of GaAs is 18.08 Å/s and etch rate of Al0.3Ga0.7As is 0.0685 Å/s at a pH of 2.32. The etch stop mechanism is attributed to the formation...
The demonstration of device structure incorporating an ultrathin AlGaN barrier capped with a thin AlN layer in the source-drain access region to maintain high 2DEG charge, with a gate opening formed by selective wet etching of the AlN using heated photoresist is reported. AlN/AlGaN/GaN layer structures are grown on a-plane Al2O3 substrates by metalorganic chemical vapour deposition. In conclusion,...
Maximizing In composition in the channel structures of high-electron-mobility transistors on InP is one important aspect of achieving devices capable of operating beyond 300 GHz. In this article, we compare dc and rf performance results from two variations of one such device design, incorporating a composite-channel structure comprised of InAs clad by InP-lattice-matched InGaAs. The only difference...
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