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The purpose of this work is to investigate the effect of ohmic electrode processing on the breakdown voltage of AlGaN/GaN HEMTs. The impact of ultrasonic cleaning condition during the lift-off process on metal edge definition was investigated. It was verified that the shape of the ohmic electrode was indeed crucial for ensuring high breakdown voltage characteristics.
In this paper, we report on a methodology for theoretical prediction and optimization of charge sensitivity for ungated AlGaN/GaN high electron mobility transistor-based ion sensors operated in the reference electrode free configuration. We have performed numerical simulations of device sensitivity, specifically the change in channel electron concentration with the change in surface potential, for...
This paper describes the effect of thickening Au-plated ohmic electrodes in AlGaN/GaN HEMTs on the drain current and on-resistance. By increasing the thickness of Au-plated ohmic electrodes up to 5 µm, the fabricated AlGaN/GaN HEMT with a total gate width from 2 to 10 mm exhibited an increase in the maximum drain current by about 50 % and a reduction in the on-resistance by more than 40 %.
This paper describes fabrication and characterization of AlGaN/GaN HEMTs for large current operation. By depositing a 1000nm-thick Au metal on Ti/Al/Mo/Au source and drain ohmic contacts, a drain current of more than 4 amperes has been achieved with a total gate width of 10 mm. We discuss the dependence of saturation drain current on gate width in terms of Au thickness and source/drain ohmic electrode...
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