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We proposed channel modulated AlGaN/GaN high electron mobility transistors (HEMTs) employing fluoride plasma treatment and carried out the detailed numerical simulation of device operation using ISE-TCAD. The reduction of peak electric field is required to achieve the high breakdown voltage of AlGaN/GaN HEMTs. Proposed channel modulated AlGaN/GaN HEMTs created the fluoride plasma treated region between...
To improve the passivation process of AlGaN/GaN HEMTs, a unique passivation process has been developed in which an SiN passivation layer is deposited by MBE immediately following epitaxial growth of the HEMT structure. The effectiveness of this in situ passivation process is evaluated by comparing devices fabricated with this process to the conventional PECVD passivation process in which the SiN is...
The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact resistance of 1.3 Ohm/mm was achieved. The devices were then characterized before and after SiN passivation. Before passivation, large current dispersion was observed...
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