The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This work presents results of investigations of lateral and vertical Schottky diodes based on Molecular Beam Epitaxy (MBE) grown GaN/AlGaN heterostructures. We have used plasma assisted molecular beam epitaxy in metal rich conditions on freestanding GaN commercial substrates and GaN/sapphire heterosubstrates. The optimized technological procedures have been used to avoid parasitic conduction channels...
Technologies for microwave power transmission to small mobile equipment at 5.8 GHz are presented, including GaN Schottky barrier diode (SBD) for efficient and high power RF/DC conversion, rectenna circuits with voltage doubler pair to reduce signal reflection, and frequency modulation to control efficient charging condition in a microwave cavity box.
Comparing circuit simulation results, an analytical model for the efficiency of single shunt rectenna circuits is developed. The model estimates the DC output power and loss power in rectenna circuits and gives good agreements with circuit simulation results. With this model, the effect of signal frequency and the diode capacitance is clarified.
Reduction of ON resistance and OFF capacitance of GaN microwave rectifying diode is realized by applying T-shaped anode wiring together with increase of donor concentration in the active layer. The time constant defined by the product of ON resistance and OFF capacitance is reduced from 2.72ps to 0.79ps while the breakdown voltage decreased from 108V to 50V.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.