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Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages...
In this paper, the numerical design of a optimized quasi-vertical gallium nitride power Schottky diode for high power electronic applications is illustrated. Bevel oxide field plate was employed as a junction termination technique to enhance the breakdown voltage in reverse bias. It was found that a maximum breakdown voltage of 1995 V was obtained for a bevel width of 18 um and oxide thickness of...
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