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This paper reports a 20 W Ka-band GaN high power MMIC (Monolithic Microwave Integrated Circuit) amplifier under continuous wave (CW) operation. The one-finger large signal models were made to take account of both the phase difference of RF gate voltage at a gate feeder and thermal effect. By using this model, the gate pitch length of unit cell transistor was optimally designed to obtain maximum output...
Here, we present the use of Gallium Nitride (GaN) FETs as a replacement for PIN diodes in active detuning circuits for magnetic resonance imaging (MRI) receive coils at 63.6 MHz. We use simulated circuit models, benchtop measurements, and imaging experiments to show that GaN FETs perform comparably with a common MRI-compatible PIN diode. The GaN FET-based circuits require orders of magnitude less...
This work presents a transformer-coupled class D switched-mode power amplifier using GaN-on-Si. An aggressive time-domain compatible, scalable, Angelov device model is used to accurately predict transient switched-mode device behavior. Simulation and measurement results report the GaN power device's intrinsic device efficiency to be 62% when operating as a switch at 2.25Gb/s. The 2-transistor PA topology...
In this paper, a 10 W peak power 2 GHz highly efficient RF pulse width modulation (RF-PWM) based transmitter is presented. RF-PWM signals are generated with a dedicated 65 nm CMOS modulator and subsequently amplified with a GaN Class-E power amplifier (PA). The modulator use extended drain MOS (EDMOS) high voltage transistors to provide the required voltage swing to drive the GaN used as a switch...
A new empirical large-signal model for high-power GaN HEMTs utilizing an improved drain current (Ids) model is presented. The new Ids formulation accurately predicts the asymmetric bell-shaped transconductance (gm) over a large drain-source bias range which is crucial in modeling high-power GaN HEMTs. A method of utilizing a combination of pulsed-gate (PGIV) and pulsed-gate-and-drain (PIV) IV measurements...
GaN FET technology is facilitating the development of a new level of high power solid state switching performance. FET switches are now obtaining RF power handling levels comparable and even exceeding conventional PIN and mechanical switches up thru microwave frequencies while still offering the traditional advantages common to GaAs switches.
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