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Arbitrary-load-dependent X-parameters, automatically measured with a load-tuner working with an NVNA, are used to characterize and model a packaged 10W GaN transistor. A full nonlinear two-port functional block model for PA and other circuit design is immediately available for nonlinear simulation. It is demonstrated that the model predicts well the independent effects of harmonic load tuning without...
Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 × 125 μm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 × 125 μm) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output...
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