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This paper reports a 20 W Ka-band GaN high power MMIC (Monolithic Microwave Integrated Circuit) amplifier under continuous wave (CW) operation. The one-finger large signal models were made to take account of both the phase difference of RF gate voltage at a gate feeder and thermal effect. By using this model, the gate pitch length of unit cell transistor was optimally designed to obtain maximum output...
The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using...
A 3-stage wideband power amplifier (PA) using a 0.15 pm gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) process from NRC is designed, fabricated, and measured. After characterization of the high electron mobility transistor (HEMT), a non-linear model was created from the measured data for use in the design. The reactively matched 3.8 mm × 1.8 mm PA also uses resistive elements...
This paper discusses an approach taken to extract a virtual X-parameter (vX-parameter) model for a 500W L-Band internally matched device (IMD). X-parameters are essentially an open form of nonlinear data format that can be directly extracted from an NVNA and can be used in a circuit simulator as non-linear models. However, for very high power devices, the NVNA and its required peripheral components...
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