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A Class-F 5 – 6 GHz 10 W Power Amplifier was designed with Qorvo's T2G6000528-Q3 GaN transistor using a model developed by Modelithics™. The core of this device is a 10-W die constructed with Qorvo's proven QGaN25 production process that is optimized for high power density and drain efficiency. The optimization design process involves producing model load-pull contours to identify area of loading...
This letter presents the first high-frequency, multi-harmonic-controlled , Class-F power amplifier (PA) implemented with a packaged GaN transistor. For PA design at high frequencies, parasitics of a packaged transistor significantly increase the difficulty of harmonic manipulation, compared to low-frequency cases. To overcome this issue, we propose a novel design methodology based on a three-stage,...
A concurrent second harmonic controlled 1.7/2.14GHz dual-band GaN power amplifier (PA) for base station is designed, fabricated and tested in this paper. The influence of 2nd harmonic on PAE (Power Added Efficiency) for dual-band PA is discussed. A novel bias line structure is proposed to control the 2nd harmonic in the gate and drain side for dual-band operation. To the best knowledge of authors,...
Arbitrary-load-dependent X-parameters, automatically measured with a load-tuner working with an NVNA, are used to characterize and model a packaged 10W GaN transistor. A full nonlinear two-port functional block model for PA and other circuit design is immediately available for nonlinear simulation. It is demonstrated that the model predicts well the independent effects of harmonic load tuning without...
A systematic, first-pass methodology for designing high efficiency power amplifier (PA) using only large signal CAD models is presented. Detailed analysis using the model reveals significant insights into PA operation as well as the required impedance environment for high efficiency mode of operation. In particular, waveform engineering and empirical loadpull are used to determine the optimal class...
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