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The design and measured performance of wideband, high power GaN SPDT and SP3T MMIC switches in low-cost overmolded plastic package is presented. The switches operate in the 0.15–2.8 GHz band with class-leading CW input power handling of 50W, low insertion loss and excellent isolation. The reflective switches employ a series/shunt circuit architecture, fully integrated input and output matching using...
This paper reviews applications of artificial neural networks (ANNs) to several distinct problem areas that arise in compound semiconductor device modeling and characterization. Properties and corresponding benefits of ANNs for these applications are presented culminating in an accurate large signal-model of GaN HEMT transistors (with thermal and trapping effects). Smooth functional approximations...
In this paper are given some recent results on modeling of High Power GaN HEMT devices. The GaN HEMT is very promising for high power application, but we push device to the limits, so many issues are becoming critical. For example, access resistances Rs, Rd in high power GAN HEMT are bias and temperature dependent - their extraction from cold FET measurements can lead to over optimistic prediction...
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