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Currently, photovoltaic (PV) grid inverters include two sorts, isolated type and non-isolated type. One of the main problems of the isolated PV grid inverters is common mode (CM) noise. This paper introduces a dual Buck inverter for the purpose of the suppression of CM current in PV grid inverter. Compared with traditional full bridge inverter, this topology has simple structure, high efficiency,...
The switching waveforms and losses of a GaN gate injection transistor (GIT) bidirectional switch, a type of four-terminal device, were analyzed for the first time using an equivalent circuit model. By applying a three-terminal model to the equivalent circuit model of the GIT bidirectional switch and by using the waveforms of the chopper circuit, the parameters were derived with high accuracy. Furthermore,...
In the present article an experimental recovery of GaAs and GaN PHEMT linear equivalent circuit and noise model are presented. The linear equivalent circuit and noise mode for two types of PHEMT manufactured by FSUE RPC “Istok” (molecular beam epitaxy structure on GaAs and GaN) are recovered.
Power transistors basically consist of a number of active transistors that are mounted in parallel inside the package. High powers require large transistor sizes, which translates into significant physical dimensions. For circuit design, on the other hand, a lumped model is favorable for sake of simulation speed and numerical convergence. This paper addresses questions related to reducing the equivalent...
An equivalent circuit model for gallium nitride-based high electron mobility transistors (GaN-HEMTs) in an exact circuit simulation is proposed. The equivalent circuit contains inherent GaN device properties, such as current-collapse and shot-channel effects. Base on the equivalent model, an power loss simulator was developed. The simulation accuracy was more than 93%. A converter optimum design method...
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