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We investigated source potential impacts on drain disturb of NOR Flash cells and proposed a novel source-biased measurement which can separate channel leakage current disturb and band-to-band disturb. By this method we explored the origins of drain disturb of Nanoscale Flash Memory. Our results indicate that, under channel ionized secondary electron (CHISEL) injection operation, drain disturb originates...
This paper presents experimental evidences of the granular electron injection during channel hot-electron programming of NOR Flash memories. The statistical process ruling the discrete charge transfer from the substrate to the floating gate is shown to introduce a fundamental spread contribution to the programmed threshold-voltage distribution obtained by the staircase algorithm, determining its ultimate...
This work investigates for the first time charge-granularity effects during channel hot-electron programming of NOR flash memories, comparing the granular electron injection and the random telegraph noise limitations to the accuracy of the programming algorithm. The spread of the threshold voltage shift that is determined by the electron injection statistics is studied as a function of the channel...
In this paper, we report the program/erase degradation mechanisms in two transistor (2T) Fowler-Nordheim (FN) tunneling operated flash memories, based on extensive experimental study of the degradation characteristics of such 2T-FNFN test memory arrays and reference transistor arrays from several generation process technologies. A quantitative model has been established describing the degradation...
We present a split-gate based NOR flash memory array with silicon nanocrystals as the storage medium. 128 KB memory arrays have been evaluated with this technology and the results presented here show a nanocrystal memory that has been demonstrated to achieve a minimum 1.5 V operating window that is maintained through 10 K program/erase cycles; well controlled array threshold distributions; fast source-side...
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