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We present a new vertical sidewall MOSFET with embedded gate (EGVMOS) to reduce the parasitic capacitance which is the major disadvantage in a conventional VMOS. According to simulations, our EGVMOS can not only achieve about 86.34% and 54.76% reduction at Cgd at VDs = 0.05 V and 1.0 V respectively, but also improves the device reliability due to suppressed kink effects, in comparison with a conventional...
In this work, we present a novel vertical MOSFET with embedded gate structure and try to overcome the challenges mentioned above by modifying the junction depth. Therefore, four types of vertical sidewall MOSFETs with embedded gate (EVGMOS) are also demonstrated and called the EVGMOS having lightly-doped drain (LDD) w/o or w/ 2.5 nm Si etching after gate formation and non-LDD w/o or w/ 2.5 nm Si etching...
In this study, we propose a novel polysilicon thin-film transistor with multi-trenched body (MTB TFT). According to the ISE-TCAD simulations, our proposed MTB TFT gets a steep subthreshold swing (S.S.), a reduced drain-induced barrier lowering (DIBL), a lower drain off-state leakage, and a higher ION/IOFF ration, in comparison with a conventional poly-Si TFT. In addition, due to the MTB scheme, the...
A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the...
A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation technique which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique...
Silicon nanowires (SiNWs) fabricated by MEMS technology and its DC response to antigen (HBsAg) was demonstrated in this paper. Anisotropic self-stop etching was employed to ensure low cost batch production. Electrical characterization revealed that, field effect of such device, with SiNWs' width and thickness in the order of 10 nm, guaranteed linear resistance modulation in a wide range, which made...
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