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In this paper, the structure and characteristics of high-speed optocouplers were analyzed. The signal propagation speed of high-speed optocoupler is fast due to Schottky clamped transistors. As the characteristic parameter, propagation delay time (PDT) was chosen to evaluate storage life of high-speed optocouplers. Then, failure modes of high-speed optocoupler during storage were surveyed. Degradation...
There is strong interest in Micro Aerial Vehicle (MAV) control architectures which are able to systematically respect physical limitations of the plant. Nonlinear Model Predictive Control (NMPC) inherits the required constraint handling abilities and is easy to reconfigure in case of plant degradation. This work presents a promising cascaded control architecture for multirotors for the task to follow...
A method of data processing — least squares support vector machine (LS-SVM), has been introduced to predict the storage life of crystal resonator. Several environmental factors have been investigated for their effects on the degradation of the function of quartz crystal resonator, the main degradation mechanisms of crystal resonator are studied and analyzed to figure out the trend of the performance...
Power fade of lithium cells due to accelerated factors of temperature and charging-discharging rate was assessed. A lithium-ion battery aging model for predicting the power fade of 18650-size cells was applied, and then statistically accelerated degradation tests were performed to validate the model. The experimental results show that the higher temperature and charging-discharging rate lead more...
The reliability of advanced embedded non-volatile memories has been discussed using the 2T-FNFN devices example. The write/erase endurance and the data retention are the most important reliability parameters. The intrinsic reliability mechanisms can be addressed through single cell evaluation, while the cell-to-cell variation determines the product level reliability. The cell-to-cell variation can...
Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.
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