In this paper, the structure and characteristics of high-speed optocouplers were analyzed. The signal propagation speed of high-speed optocoupler is fast due to Schottky clamped transistors. As the characteristic parameter, propagation delay time (PDT) was chosen to evaluate storage life of high-speed optocouplers. Then, failure modes of high-speed optocoupler during storage were surveyed. Degradation of light emitting diode (LED) is the main failure mode of high-speed optocoupler which would affect the propagation speed. Considering that the main stress of storage is temperature, high temperature storage was designed to accelerate degradation on luminous efficiency of LED. 20 devices were divided into 4 groups which were placed under 100 °C, 125 °C, 150 °C, 175 °C respectively. Degradation tendency of PDT was predicted by function fitting, which based on the results of PDT using least square method. Devices under 175°C had some abnormal failure and its PDT was invalid. According to the tendency of PDT under 100°C and 125°C, activation energy and accelerated factor in Arrhenius equation of different temperatures can be calculated. Based on degradation tendency under 150 °C and Arrhenius equation, storage life can be predicted as 280.6 weeks under 25°C.