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THz technology offers multiple applications in areas such as remote sensing, spectroscopy, biomedical imaging, and ultra-wide bandwidth communications [1]. However, obtaining high-frequency performance at THz frequencies has proven challenging in conventional electronic devices. This difficulty motivated the exploration of unconventional transport mechanisms such as electron plasma waves. Two dimensional...
We study the half-field subband-Landau resonant splitting of a two-dimensional electron gas and demonstrate the possibility to tune the intersubband spacings via density-chopped far-infrared transmission spectroscopy in the absence of external magnetic field.
This paper presents an analysis of different variations to contact the source of GaN power transistors in a package. Two variants relying on bondwires, and three variations using source vias are considered. Based on em simulations, equivalent circuits are determined for the package, which enables detailed analysis of cause and effect in the overall package performance. The focus of the investigation...
The AlGaN/GaN heterostructure is an excellent candidate for the realization of sub-millimeter wave power amplifiers, which can serve as integrated power source for THz frequency multipliers. Here we discuss the operation of AlGaN/GaN transistors as THz detector, which provides information on the behavior of the electron system at THz frequencies.
This paper addresses an important issue regarding power-transistor packages: The mutual inductive coupling of the bondwires. Based on em simulation and analytical parameter extraction, it is shown that the mutual inductances play a key role in determining the packaged transistor performance.
High electron mobility transistors can work as room-temperature direct detectors of radiation at frequency much higher than their cutoff frequency. One open issue is how the radiation couples to the sub-wavelength transistor channel. Here, we studied the coupling of radiation to an AlGaN/GaN transistor with cut-off frequency of 30 GHz. Local irradiation with a free electron laser source at 0.15 THz...
In this paper we present state of the art modeling of GaN HEMTs, which includes for the first time simultaneous consideration of the electromechanical coupling, short-range Coulomb and quantum mechanical size quantization effects.
We investigate the influence of the gate-voltage dependence of the polarization charge on the electron sheet charge density in the channel and how it reflects on the device transfer and output characteristics in GaN HEMTs. We find that a 10% increase in the polarization charge is needed to match the experimental data when the gate-voltage dependence of the polarization charge is included in the theoretical...
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