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This paper presents a front-end 16-channel readout chip to be coupled with PMs (photomultipliers) or APDs (avalanche photodiodes), which is designed in a BiCMOS process for a fast beam tagging system used in ion-therapy. Each channel consists of a current conveyor and two separate output stages: one is a current comparator for signal event detection, and the other is a charge sensitive amplifier (CSA)...
Gate leakage of charge sensitive amplifier (CSA) in deep submicron process not only increases noise but also impacts the DC voltage of preamplifier output. This paper proposes a CSA for CdZnTe particle detector readout implemented in 0.18μm CMOS process including its new reset and leakage compensation configuration which has low noise and short reset time, especially, is adjustable to fit...
This paper presents our work on a 8-channel low noise Front-End electronic coupled to a Liquid Argon (LAr) TPC (Time Projection Chamber). Each channel consists of a Charge Sensitive Amplifier (CSA), a band pass filter and a 50 Ohms buffer as line driver. A serial link based on a `i2c-like' protocol, provides multiple configuration features to the circuit by accessing slow control registers. Only the...
A 160 channel read-out circuit aimed for a large energy-resolved photon-counting X-ray pixel detector has been designed. The high number of channels combined with high speed and noise performance requires very low power consumption and small footprint of the analog channel. We describe the design of the analog channel, aimed for a detector capacitance of 3-5pF and with a target ENC of 300 electrons...
This paper presents the design of a low-noise multi-channel front-end readout chip integrated with a high-resolution TDC. It is foreseen to be used as front-end readout electronics of Avalanche Photo Diodes (APD) dedicated to a small animal Positron Emission Tomography (PET) system. The architecture of the chip is depicted. Two prototype chips, a ten-channel front-end chip and a three-channel high-resolution...
This paper presents initial results from electrical, spectroscopic and ion beam induced charge (IBIC) characterisation of a novel silicon PIN detector, featuring an on-chip n -channel JFET and matched feedback capacitor integrated on its p-side (frontside). This structure reduces electronic noise by minimising stray capacitance and enables highly efficient optical coupling between the detector back-side...
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