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An accurate new and simple numeral modeling of nano-scale dual gate n- MOSFET device in the ballistic region is presented. The model and the analysis is performed with channel length below 20 nm where electron transport is predominantly ballistic. In this paper a new developed modeling approach based on Boltzmann transport equation and Poisson equation in an n-channel nanoscale double-gate MOSFET...
Analytical expressions for terminal charges of an independent-gate asymmetric double gate MOSFET (DGFET) are derived. The new charge model is C∞ continuous, valid for all bias conditions and does not involve charge-sheet approximation. This is accomplished by developing the symmetric linearization method in the form that does not require identical boundary conditions at the two Si-SiO2 interfaces...
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