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In this paper, we reveal an activation energy of a frequency-dependent drain conductance in AlGaN/GaN HEMT. Firstly, using two-port vector network characteristics at a low frequency less than MHz, it is confirmed that frequency dependence of a drain conductance (Gd) results in peculiar behavior in S22 of the AlGaN/GaN HEMT. In order to obtain the activation energy of the process of the frequency response...
GaN technologies have penetrated the microelectronic markets, proving the high potential of this technology for a wide variety of applications (optoLEDs and Laser, power and RF electronics). However, robustness of these widebandgap technologies still needs to be improved: a large number of studies have addressed the main different roots provoking degradation of RF, DC or thermal performances of transistors...
This paper reports RF losses and buffer isolation analysis of AlGaN/GaN epitaxial layers grown on high resistive Si(111) substrate with different GaN buffer thicknesses. Measurements are performed at different temperatures. At 85°C, measurements exhibit very low isolation current down to 80 nA/mm between two ohmic contacts biased at 180 V and separated by 10 μm. At 100°C, coplanar lines show RF losses...
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